MT
MICRON TECHNOLOGY INC (MU)·Q2 2025 Earnings Summary
Executive Summary
- Q2 2025 revenue was $8.05B and non-GAAP EPS was $1.56, both above Wall Street consensus; gross margin compressed sequentially on heavier consumer NAND mix and pricing . EPS beat vs S&P Global consensus of $1.42 and revenue beat vs $7.89B*.
- Data center strength continued: HBM revenue crossed $1B and data center DRAM set a record; Micron expects record quarterly revenue in Q3 with DRAM and NAND demand growth across data center and consumer markets .
- Q3 2025 guidance: revenue $8.80B ±$200M, non-GAAP GM 36.5% ±100bps, non-GAAP OpEx ~$1.13B, non-GAAP EPS $1.57 ±$0.10, implying continued elevated mix of high-value products despite near-term margin headwinds from NAND underutilization .
- Strategic catalysts: rapid shift to HBM3E 12-high in 2H CY25, SOCAMM LPDDR5X module leadership with NVIDIA Blackwell, and first 1-gamma DRAM node with EUV; management reiterated confidence in record FY25 revenue and improved profitability .
What Went Well and What Went Wrong
- What Went Well
- HBM milestone and data center momentum: “HBM revenue grew more than 50% sequentially to a new milestone of over $1,000,000,000… data center DRAM revenue reached a new record” .
- Technology leadership: launched 1‑gamma DRAM (first Micron EUV DRAM node) with 20% lower power, 15% better performance, >30% bit density vs 1‑beta ; SOCAMM LPDDR5X co-developed with NVIDIA for GB300 platform .
- Raised HBM TAM and qualification breadth: HBM3E 12‑high designed into NVIDIA GB300, with majority of 2H CY25 HBM shipments expected to be 12‑high; multi‑billion FY25 HBM revenue expected .
- What Went Wrong
- Sequential margin pressure: non-GAAP gross margin fell ~160 bps QoQ on consumer-oriented NAND mix and pricing; NAND revenue down 17% QoQ, prices declined high teens % .
- NAND underutilization weighs on margins; more under-absorption costs will flush through inventories into Q4 and into FY26 .
- Consumer inventory digestion and pricing: recent consumer DRAM/NAND pricing softness; China legacy DRAM (DDR4/LP4) supply concentrated at lower-end impacted mix; LP4/D4 remain ~10% of revenue in FY25 and will become smaller over time .
Financial Results
Values with asterisk (*) retrieved from S&P Global.
Segment and product breakdown (Q2 2025):
Key KPIs (Q2 2025):
Guidance Changes
Q2 2025 prior guidance vs actual:
Current guidance (Q3 2025):
Earnings Call Themes & Trends
Management Commentary
- “Micron is in the best competitive position in our history… In fiscal Q2, data center DRAM revenue reached a new record. HBM revenue grew more than 50% sequentially to… over $1,000,000,000 of quarterly revenue.” — Sanjay Mehrotra (CEO) .
- “Micron’s one gamma is our first DRAM node incorporating EUV… 20% lower power, 15% better performance and over 30% improvement in bit density compared to our one beta DRAM.” — Sanjay Mehrotra .
- “We see strong demand for HBM and have once again increased our HBM TAM estimate for calendar 2025 to over $35,000,000,000… Micron’s HBM3e 12-high is designed into the GB300.” — Sanjay Mehrotra .
- “We expect revenue to be $8,800,000,000 ± $200,000,000… non-GAAP gross margin 36.5% ± 100 bps… non-GAAP EPS $1.57 ± $0.10.” — Mark Murphy (CFO) .
- “LP DRAM in a SOCAMM form factor enables easier server manufacturability and serviceability… helps drive broader LP adoption in the server market.” — Sanjay Mehrotra .
Q&A Highlights
- HBM TAM raised again; drivers include faster move to 12-high and higher ASP/content; majority of 2H CY25 HBM volume expected 12-high .
- Gross margin headwinds quantified: startup costs modest initially (<30–40bps exiting year) grow through FY26; NAND underutilization costs pass through inventories in Q4 and into FY26 .
- DRAM costs: “all‑in DRAM costs… flattish” for FY25 (inclusive of HBM), clarifying prior mid-to-high-single-digit front-end cost-down commentary .
- LPDDR5X SOCAMM leadership: first to volume; deep partnership with NVIDIA; LP in data center reached >$1B milestone combined with high-capacity DIMMs .
- Consumer legacy dynamics: China DDR4/LP4 supply impacted recent pricing; DDR5 overlap limited; inventories healthier by spring, smartphone orders bounced back with rising DRAM capacities (8→12GB) .
Estimates Context
- Q2 2025 results vs S&P Global consensus: Revenue $8.05B vs $7.89B* (beat), Non-GAAP EPS $1.56 vs $1.42* (beat), with 24–25 estimates contributing to consensus*. Sequential revenue down 8% on mix/pricing headwinds, but EPS beat reflects high-value DRAM mix and OpEx discipline .
- Q3 2025: Company guides $8.8B revenue and $1.57 non-GAAP EPS; prior consensus stood at $8.83B and $1.59*, suggesting broadly in-line top-line and EPS guide at the time*, with mix/tax assumptions and NAND pricing likely focus points for estimate revisions .
Values with asterisk (*) retrieved from S&P Global.
Key Takeaways for Investors
- Near-term: Strong data center DRAM/HBM mix offsets consumer pricing softness; expect sequential GM dip in Q3 and rebound “somewhat” in Q4 as mix improves despite NAND underutilization cost flush. Position long-biased on HBM ramp trajectory into 2H CY25 and FY26 .
- Medium-term: HBM3E 12‑high becoming majority of 2H CY25 shipments with NVIDIA GB300 design-ins; HBM4 volume in CY26 provides multi-year content and TAM expansion .
- Structural discipline: NAND underutilization and delayed node transitions, plus −10% structural wafer capacity exiting FY25 vs FY24, should support price/margin normalization; watch for pricing actions in CQ2 and CQ3 .
- Cost dynamics: All-in DRAM costs flattish FY25; startup costs for Idaho DRAM and 1‑gamma ramp rise into FY26—model incremental GM headwinds vs mix tailwinds .
- LPDDR5X SOCAMM: First-mover advantage; LP in data center lowers memory power by >2/3 vs D5—expect broader adoption alongside GB300 deployments and potential ASP uplift vs soldered solutions .
- Balance sheet optionality: $9.6B liquidity (cash/investments) and extended debt maturities support capex for HBM packaging expansion (Singapore, Taiwan test) and Idaho DRAM fab ramp toward FY27 output .
- Estimate implications: Raise EPS and revenue for data center mix and HBM ramp; temper near-term GM for NAND underutilization; Q3 guide broadly in-line—key swing factors are NAND pricing trajectory, consumer mix, and tax rate .